STI fill effect on poly-poly comb IL

摘要

High density plasma (HDP) chemical vapor deposition (CVD) oxide has been evaluated extensively by engineers in semiconductor industry for filling shallow trench isolation (STI) [1,2,3]. As technologies shrink, STI width decreases i.e. aspect ratio (AR) increases, and existing gap fill process will need to be optimized to maintain gap fill capability. This paper reports on poly-poly comb leakage problem caused by poor gap fill and an experiment carried out to improve gap fill capability.