Some key researches on SiC device technologies and their predicted advantages

摘要

SiC has proven to be a good candidate as a material for next generation power semiconductors. In this paper we attempt to analyse its performances in actual device application through outcomes from some key researches. To analyze advantages of SiC based power devices over their silicon based counterparts, a high volume and standard application segment, such as the 400-480Vac line rated motor drives group, is considered to be ideal. From this view point, the present research work has focussed on 1200V class device technologies. 4H-SiC based MOSFET and SBD structures have been considered to be the best fit device configurations for the targeted application category, and have been thoroughly investigated. New SiC-MOSFET/SBD structures have been developed aiming at high power density applications. In this paper, performance details of such newly fabricated SiC devices, along with their evaluation under actual operating conditions, are also introduced.