1/f Noise Modeling at Low Temperature with the EKV3 Compact Model

摘要

We report on the characterization of Low-Frequency (LF) noise at room temperature and at low temperature (77 K) in a dual gate process with 1.8 V and 3.3 V MOSFETs. We found that the LF noise behavior in both n- MOSFETs and p-MOSFET of this process is well described physically by the correlated carrier number - mobility fluctuation model. We show that the flicker noise model introduced in the EKV3 compact MOSFET model allows to fit experimental data in a very wide range, from weak to strong inversion regimes.