Photoluminescence Study of Energy Levels in Ge Quantum Dots in Si

机译：葛量子点中的能量水平的光致发光研究

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摘要

We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.

机译：我们研究了技术参数对Si矩阵Ge量子点光致发光性质的影响。我们发现增长和退火条件，其提供了具有两个能级的Ge量子点的形成。

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《International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies》|2009年||共3页
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作者
Alexander A. Shklyaev; Andrei V. Gorbunov; Masakazu Ichikawa;
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原文格式 PDF
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中图分类 TN4-53;
关键词
Ge/Si; Quantum dots (QD); Photoluminescence (PL);

机译：GE / SI;量子点（QD）;光致发光（PL）;

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2. The Studies Of Ge Quantum Dots On Strained Si_(0.7)ge_(0.3) Layer By Photoluminescence And Deep Level Transient Spectroscopy [J] . Zhensheng Tao, Ning Zhan, Hongbin Yang, Applied Surface Science . 2009,第6期

机译：通过光致发光和深能级瞬态光谱研究应变Si_（0.7）ge_（0.3）层上的Ge量子点
3. In As quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: Electronic energy levels and carrier's dynamic [J] . Alouane M.H.H., Ilahi B., Sfaxi L., Journal of nanoparticle research: An interdisciplinary forum for nanoscale science and technology . 2011,第11期

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4. Photoluminescence Study of Energy Levels in Ge Quantum Dots in Si [C] . Alexander A. Shklyaev, Andrei V. Gorbunov, Masakazu Ichikawa International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies . 2009

机译：葛量子点中的能量水平的光致发光研究
5. Study of quantum confined energy levels in self-organized indium(gallium,aluminum)arsenide/(gallium,aluminum)arsenide quantum dots and their application to mid-infrared sources and detectors. [D] . Krishna, Sanjay. 2001

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6. A study of photoluminescence properties and performance improvement of Cd-doped ZnO quantum dots prepared by the sol–gel method [O] . Jun Zhang, Su-Qing Zhao, Kun Zhang, 2012

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7. Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots [O] . J. Phillips, P. Bhattacharya, U. Venkateswaran 1999

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Photoluminescence Study of Energy Levels in Ge Quantum Dots in Si

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