Demonstration of Spin Polarization Switching at 2.2 TBit/sec for Proposed Spin-Photon Memory

摘要

New type of non-volatile high-speed optical memory is proposed, which utilize the magnetization reversal of nanomagnet by spin-polarized photo-excited electrons. To verify high speed of proposed demultiplexing method, the switching of spin polarization at 2.2 TGz was demonstrated.