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Study on the Electronic Structure and Optical Properties for BaSi2

机译:Basi2的电子结构和光学性能研究

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The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi2 have been calculated using the first-principle density function theory pseudopotential method. The results show that BaSi2 is an indirect semiconductor with the band gap of 1.086 eV, the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p, the valence bands of BaSi2 are mainly composed of Si 3p, 3s and Ba 5d. The calculated dielectric function of BaSi2 shows that it possesses anisotropic character, the biggest peak of absorption coefficient is 2.15 times 105 cm-1.
机译:使用第一原理密度函数理论假势法计算了稳定正交基质Basi 2 2 是一个间接半导体,具有1.086eV的带隙,导电带主要由Ba 6s,5d以及Si 3p,Basi 主要由SI 3P,3S和BA 5D组成。基本Basi 2 的计算介电函数表明它具有各向异性特征,吸收系数的最大峰值为2.15倍10 5 cm -1

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