An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport

摘要

In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantummechanical effect through modifying the intrinsic carrier concentration under 2-dimensional confinement. With the proposed model, the performances of Ge/Si core/shell NWFETs are analyzed and significant characteristics are demonstrated in details. The analytic model in this paper provides a framework for further developing compact models of the NWFETs with Ge/Si core/shell heterostructure for circuit design and simulation.