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A Unified Density Gradient Approach to 'ab-initio' Ionised Impurity Scattering in 3D MC Simulations of Nano-CMOS Variability

机译:纳米CMOS可变性三维MC模拟中“AB-Initio”电离杂质散射的统一密度梯度方法

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摘要

A methodology for incorporating quantum corrections into self-consistent atomistic Monte Carlo (MC) simulations via the density gradient effective potential is presented. The quantum corrections not only capture charge confinement effects, but accurately represent the electron-impurity interaction used in previous 'ab initio' atomistic MC simulations, showing agreement with bulk mobility simulation. The effect of quantum corrected transport variation in statistical atomistic MC simulation is then investigated using a series of realistic scaled devices. Increased current variation is observed compared with quantum corrected drift diffusion simulation and with previous classical MC results.
机译:呈现了一种通过密度梯度有效电位将量子校正掺入自我一致原子蒙特卡罗(MC)模拟的方法。量子校正不仅捕获电荷限制效应,而且可以准确地表示以前的'AB Initio'原子MC模拟中使用的电子 - 杂质相互作用,显示与批量移动模拟的协议。然后使用一系列现实的缩放设备研究量子校正传输变化在统计原子MC模拟中的影响。与量子校正的漂移扩散模拟和以前的经典MC结果相比,观察到增加电流变化。

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