Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

摘要

Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using driftdiffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.