Films With Regulated Optical And Electrophysical Parameters

摘要

There are proposed methods of film heterostructures deposition by means of a magnetron and an ion source. They make it possible to regulate compositions of film structures and also other parameters, for example refractive indexes, conductivity. It is possible to form a film with preliminary demanded values of parameters in the wide range. Refractive index of films on the base of Ti was varied in the range of values 1.70 ≤ n ≤ 2.45. Conductivity of film structures changed from metal up to high resistance isolator. Diamond – like carbon , Si_xC_y,O_y, Si_xO_yN_z and other kinds of film structures were made by means of an ion source with a cold cathode directly from an ion beam. Refractive index value changed in the range of 1.40 ≤ n ≤ 2.65. It is modified a laser method of end point detection of transparent film deposition process after reaching of a demanded thickness. It has been modified a laser scanning system for wafers and semiconductor structures surfaces investigation. This system can measure parameters at 10000 points on square up to 100 x 100 mm~2. It can be used for computer modelling, solar cells and silicon-oninsulator (SOI) structures investigations.