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The Effects of π and a Coupling on Electron Transport in a Molecular Assembly System

机译:π和耦合对分子组装系统中电子传输的影响

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The purpose of this paper is to study the electronic transport through molecular assembly system (MAS) by presenting I-V and G-V characteristics analysis for different geometry structure. The model involves 1,4-dithiolbenzene (DTB) (HSC6H4SH) molecules stacked in (1D) ordered structure. The MAS can contain up to six DTB molecules packed in the parallel geometrical arrangement connected between two electrodes. The relationship between the threshold voltage V_(th) , the metal-molecule interaction strength σ_i and N the number of DTB molecular units which involves the π-orbital interactions is investigated. The simulation results show that V_(th) changes significantly and depends on N. The system in the regime of stronger π-interactions obtained with larger N reduces Vth. On the contrary, σ_i shows no effect on V_(th). Moreover, in such molecular assembly system junctions, the connection between the molecule and the electrodes greatly affects the current-voltage characteristics, particularly in the saturation region.
机译:本文的目的是通过呈现不同几何结构的I-V和G-V特性分析来研究通过分子组装系统(MAS)的电子传输。该模型涉及堆积在(1D)有序结构中的1,4-二苯苯(DTB)(HSC6H4SH)分子。 MAS可含有最多六个DTB分子,其填充在两个电极之间的并联几何布置中。研究了阈值电压V_(Th)之间的关系,金属分子相互作用强度σ_i和n涉及涉及π-轨道相互作用的DTB分子单元的数量。仿真结果表明,V_(TH)显着变化,并取决于N.用较大的n获得的更强π-相互作用的制度中的系统减少VTH。相反,σ_i对V_(TH)显示没有影响。此外,在这种分子组装系统结中,分子和电极之间的连接极大地影响了电流 - 电压特性,特别是在饱和区域中。

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