Cathodoluminescence characterisation of vapour transport grown ZnO structures

摘要

ZnO structures grown under controlled vapour-phase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influenced by the oxygen gas content during vapour transport growth.