Effect of Substrate-Drop Parameters on Nanowhiskers Morphology

机译：基材下降参数对纳瓦敏的影响形态学

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Si nanowhiskers (NW) morphology was studied by Monte Carlo simulation. It was found out that different substrate-seed wetting conditions can lead to growth of straight, curved or tube-like NWs. Initial substrate-seed interface orientation and orientation of growing NW sidewall facets determine growth directions of model NWs.

机译：通过蒙特卡罗模拟研究了Si Nanowhiskers（NW）形态。发现不同的基质润湿条件可导致直线，弯曲或管状NWS的生长。初始基板 - 种子界面方向方向和生长NW侧壁小平面的方向确定模型NWS的生长方向。

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来源
《International Workshop and Tutorials on Electron Devices Materials》|2008年||共4页
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作者
Alla G. Nastovjak; Igor G. Neizvestny; Nataliya L. Shwartz; Evgeniya S. Sheremet; Zoya Sh. Yanovitskaja;
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原文格式 PDF
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中图分类 TN6-53;
关键词
Monte Carlo; Nanowhisker;

机译：蒙特卡洛;纳维克斯;

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4. Effect of Substrate-Drop Parameters on Nanowhiskers Morphology [C] . Alla G. Nastovjak, Igor G. Neizvestny, Nataliya L. Shwartz, International Workshop and Tutorials on Electron Devices Materials . 2008

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Effect of Substrate-Drop Parameters on Nanowhiskers Morphology

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