IMPACT OF ION IMPLANTATION ON NICKEL GERMANIDES FORMATION WITH PURE-Ge SUBSTRATE AND THE ELECTRICAL DEPENDENCE OF NiGe/Ge SCHOTTKY DIODE ON CONTA SIZE

摘要

The materical and electrical characterization of nickel germanides on pure n-(100) Ge are investigated in this paper. The nickel germanides were achieved by rapid thermal amnealing (RTA) in N_2 ambient for 60s at different temperature.