Remarkable enhancement of 254-280 nm deep ultraviolet emission from AIGaN quantum wells by using high-quality AIN buffer on sapphire

摘要

We observed remarkable enhancement of 254-280 nm deep ultraviolet (UV) emission from A1GaN multi quantum wells (MQWs) by using low threading dislocation density (TDD) IN templates on sapphire substrates. High-quality AIN tem- lates were fabricated using ammonia pulse-flow multi-layer (ML) MN growth technique by metal-organic chemical vapor deposition (MOCVD). The photoluminescence (PL) intensity of AIGaN-QW with emission wavelength of 280 nm was in creased by approximately 30 times by reducing the full width at half-maximum (FWHM) of X-ray diffraction (102) ω-scan rocking curve (XRC) of AIGaN buffer on ML-AIN from 1214 to 488 arcsec. We obtained similar emission enhance-ment for AIGaN QWs with emission wavelengths of 254, 260 and 270 nm. We found that PL intensity of the QWs were rapidly increased when FWHM of XRC (102) is reduced as narrow as 800-1000 arcsec.