Wide-bandwidth 60 GHz differential LNA in SiGe:C technology

摘要

This paper presents the differential LNA design for unlicensed 60 GHz band. The architecture is elaborated in conjunction with process-related effects (ground slits) in order to minimize the modeling errors and enhance the performance. The differential test LNA is fabricated in IHP SG25H1 high performance 0.25 μm BiCMOS SiGe:C technology. On wafer measurement results have shown the gain of 24.5 dB with more than 10 GHz operational bandwidth. Power consumption of less than 60 mW is observed. Average in-band noise figure of 5.95 dB with a minimum of 5.3 dB was measured.