High efficient pin orange organic light emitting diode fabrication withnovel Al cathode using DC magnetron sputtering

摘要

In this study a high efficient p-i-n type orange organic light emitting diode (OLED) is presented. It is based on doped charge transport layers to realize low operating voltage and emitting layer which consists of alpha-NPD(4,4-bis [N-(1- naphty1)-N-phenylamino]biphenyl) and Iridium(III)bis(2-methyldibenzoff,h]quinoxaline)(acetylacetonate) as a host and a phosphorescence dye dopant respectively. Organic layers are vacuum-sublimed on ITO-coated glass substrates in vertical inline deposition tool, and aluminium is deposited directly on organic layer by DC magnetron sputtering to form a cathode. Since sputter deposition of top electrode is known to damage organic layers and degrade OLED performance, various sputter process parameters are selected and applied for cathode formations, and the OLEDs are characterized by means of I-V-L measurements. The OLED characteristics are evaluated with the plasma factors based on sputter process parameters in order to explain the damage sources from sputtering process. The characteristics of OLEDs that cathodes are deposited by sputtering and evaporation are compared. The fabricated OLED which has the lowest damage level exhibits almost comparable result to the OLED that the cathode is deposited by evaporation. The OLED shows good performances of driving voltage of 4.25 V and luminous efficacy of 7.77 lm/W and current efficiency of 10.68 cd/A at 1000cd/m~2.