Point Defects Characterization in Quenched δ-Ni_2Si as Deduced from Isothermal Magnetic Susceptibility Measurements

摘要

The behaviour of quenched defects in Ni_2Si compound is studied by isothermal susceptibility magnetic measurements. In the range of temperature 553-593K, where an enhancement of susceptibility has been previously detected by isochronal measurements, an activation energy (E_A=2.5 ± 0.2 eV) is determined. This value is in agreement with the break-up of 3D nickel vacancy clusters, formed at lower temperatures, and the subsequent formation of nickel rich defects via the released vacancies.