FABRICATION OF SiC MEMS PRESSURE SENSOR BY ANODIC BONDING

摘要

Due to its outstanding chemical stability and mechanical properties, silicon carbide (SiC) is one of the best materials for harsh environment applications. In this work, bulk micromachining technique was utilized to fabricate a PECVD SiC pressure sensor. This technique simplified the process and solved the stickiness problem in surface micromachining. The whole fabrication temperature is under 450°C, which makes it compatible with the CMOS process.