Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate

摘要

Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs). We have demonstrated a successful crystallization of large grain poly-Si films with sequential lateral solidification (SLS) method. The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to Al{sub}2O{sub}3 gate dielectric film, which was deposited by a plasma enhanced atomic layer deposition (PEALD) method. The fabricated TFT showed a field effect mobility of 95cm{sup}2/Vs, a threshold voltage of -3V and a sub-threshold swing of 0.45V/dec.