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Making Memristors a Reality: advances in physical understanding and device integration

机译:制作忆内函数现实:物理理解和设备集成的进步

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Memristors are the fourth fundamental circuit element which was predicted in the early 1970's and reduced to practice in 2008. Unlike capacitors or inductors, memristors do not store charge or energy, but do store information. This quality makes them a candidate for next generation memory technology, potentially replacing Flash and DRAM, whose ability to scale to future technology nodes is limited by the fact that they rely on stored charge. Because of the ability to create highly non-linear memristive devices, this technology is feasible for true crossbar memories - without requiring select transistors.
机译:存储器是第四个基本电路元件,在1970年代初预测,并在2008年减少到实践。与电容器或电感器不同,忆阻器不存储充电或能量,而是存储信息。这种质量使它们成为下一代内存技术的候选者,可能更换闪存和DRAM,其扩展到未来技术节点的能力受到它们依赖存储费的影响。由于能够创建高度非线性丢弃器件,这项技术对于真正的横梁存储器是可行的 - 而不需要选择晶体管。

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