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Passively Q-switched Yb:YAG/Cr:YAG ceramics miniature lasers with peak power > 150 kW and nearly diffraction-limited beam quality

机译:被动Q-Switched YB:YAG / CR:YAG陶瓷微型激光器,具有峰值功率> 150千瓦,几乎衍射限制的光束质量

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Passively Q-switched Yb:YAG microchip laser with 530 ps pulse width has been obtained by using SESAM[1] as saturable absorber. Recently, laser-diode pumped passively Q-switched Yb:YAG/Cr:YAG all-ceramic microchip laser has been demonstrated[2], pulse energy of 31 μJ, pulse width of 380 ps has been achieved. However, there is coating damage occurrence because of the high energy fluence with low transmission of the output coupler. High transmission of the output coupler will decease the intracavity pulse energy fluence. Here we report on the high peak power laser performance of Yb:YAG/Cr:YAG all-ceramic miniature laser by using low initial transmission of the Cr{sup}(4+):YAG and high transmission of the output coupler.
机译:通过使用SESAM [1]作为可饱和吸收器,通过SESAM [1]获得了带有530ps脉冲宽度的YAG微芯片激光器。最近,激光二极管泵浦被动Q开关Yb:YAG / Cr:YAG全陶瓷微芯片激光器已经证明[2],脉冲能量为31μj,脉冲宽度为380ps。然而,由于输出耦合器的低传输,有涂层损坏发生损伤。输出耦合器的高传输将死于腔内脉冲能量。在这里,我们通过使用Cr {sup}(4 +)(4 +)的低初始传输:YAG和输出耦合器的高传输来报告YB:YAG / CR:YAG全陶瓷微型激光器的高峰功率激光性能。

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