Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors

摘要

Specific structural changes in Sc/Si multilayers (MLs) irradiated by nanosecond 46.9-nm single laser pulses with fluences of 0.04-5.00 J/cm2 were studied by methods of SEM and cross-sectional TEM. The threshold damage was found to be 0.08 J/cm2, The ML melts down under the fluence F >0.08 J/cm2, and the exothermic reaction of silicide formation starts. Main degradation mechanisms of MLs are discussed. The results of this study can be used for development of advanced multilayer minors capable handling the intense radiation conditions of new generation coherent X-ray sources.