MANUFACTURING OF SILICON INGOT BY METALLURGIC CASTING

摘要

Manufacturing of the high-purity solar grade (SOG) silicon ingot was carried out with the method of metallurgic casting— vacuum induction melting and directional solidification technology. The purification efficiency and the distribution of various impurity elements were studied under different experimental conditions. Technological parameters were optimized to change the growth condition of crystalline, the morphology and growth rate of multi-crystalline silicon were well controlled. Inductively coupled plasma atomic emission spectrometry (ICP) and scanning electron microscope (SEM) were utilized to analyze the silicon ingots. The results indicate that the purity of specimen exceeds 5N and high-purity multi-crystalline silicon ingots were obtained.