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Copper Chalcopyrite Film Photocathodes for Direct Solar-Powered Water Splitting

机译:用于直接太阳能水分裂的铜氯铜矿薄膜光电阴极

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In search of an efficient semiconductor material for direct photoelectrochemical (PEC) hydrogen production, chalcopyrite films in the Cu(In,Ga)Se{sub}2 system (CIGS) with bandgaps of 1.3-1.65eV have been evaluated. The films have been fabricated by 2-stage and 3-stage co-evaporation processes. Film samples have been fabricated into CIGS/CdS solar cells for evaluation of solid-state device properties, and into CIGS photocathodes for evaluation of the photoelectrochemical hydrogen-production characteristics. The PEC current-potential scans of the photocathodes in 0.5M sulfuric acid show photocurrents of 18-27mA/cm{sup}2 under simulated AM1.5 global light (100mA/cm{sup}2) at sufficient cathodic potential bias. In terms of fill factor of the photocurrent curves, electrodes with molybdenum back contact are superior to SnO{sub}2:F back contact because of better conductivity. The morphology as seen in scanning electron micrographs is unchanged after initial PEC testing in the cathodic regime, suggesting films are stable.
机译:寻找用于直接光电化学(PEC)氢气产生的有效半导体材料,已经评估了Cu(In,Ga)Se {se} 2系统(CIGS)中的黄铜矿膜,具有1.3-1.65ev的带隙。通过2级和3级共蒸发过程制造薄膜。薄膜样品已经制造成CIGS / CDS太阳能电池,用于评估固态装置性质,并进入CIGS光电阴极,用于评估光电化学氢气生产特性。在0.5M硫酸中的光致电流扫描的PEC电流扫描在充分的阴极电位偏压下,在模拟的AM1.5全局光(100mA / cm {sup} 2)下的光电流为18-27mA / cm {sup} 2。在光电流曲线的填充因子方面,具有钼背触头的电极优于SnO {Sub} 2:F背面接触,因为更好的电导率。在阴极状态下初始PEC测试后,扫描电子显微照片中所见的形态不变,暗示薄膜是稳定的。

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