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Thermoelectric Properties of Tl2Te-Sb2Te3 Pseudo-Binary System

机译:TL2TE-SB2TE3伪二进制系统的热电性能

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摘要

Polycrystalline-sintered samples of thallium based substances, (Tl2Te)ioo-x(Sb2Te3)x (x= 0, 1,5, 10), were prepared by melting TfoTe and Sb2Te3 ingots followed by annealing in sealed quartz ampoules. The thermoelectric properties were measured from room temperature to around 600 K. The values of the Seebeck coefficient of all samples are positive, indicating a p-type conduction characteristic. The maximum value of the power factor is 6.53X10"4 Wm"'K"2 at 591 K obtained for x= 10 (Tl<;SbTe6), which is about one order lower than those of state-of-the-art thermoelectric materials. All samples indicate an extremely low thermal conductivity, for example that of T^Te is approximately 0.35 Wnf'lC1 from room temperature to around 600 K. Although the electrical performance of the samples is not so good, the ZT value is relatively high due to the extremely low thermal conductivity. The maximum ZT value is 0.42 at 591 K obtained for Tl9SbTe6.
机译:通过熔化TFOTE和SB2TE3锭料,然后通过在密封的石英安瓿中退火,制备多晶的基于基因物质的烧结样品(TL2TE)IOO-X(SB2TE3)X(x = 0,1,5,10)。从室温到约600k测量热电性能。所有样品的塞贝克系数的值是阳性的,表明p型传导特性。功率因数的最大值为6.53x10“4个wm”'k“2,以x = 10(tl <; sbte6)获得的591 k,这约为一个低于最先进的热电的订单所有样品都表示极低的导热性,例如,T ^ TE的热导率大约0.35WNF'LC1,从室温到大约600 k。虽然样品的电气性能不是那么好,但ZT值相对较高由于热导率极低。最大ZT值为0.42,以591k获得TL9SBTE6。

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