Geiger-mode InGaAsP/InP APDs optimized for single photon counting at 1.06 um

摘要

Avalanche photodiodes optimized for Geiger-mode single photon counting at 1.06 microns have been fabricated using a quaternary InGaAsP absorber to reduce the dark count rate without sacrificing high photon detection probability. The dark count rate at a given detection probability is more than an order of magnitude lower than that of comparable Geiger-mode APDs fabricated with ternary InGaAs absorbers. Some devices show anomalous afterpulsing behavior that is reduced in severity at lower temperatures, the inverse of typical behavior. This unusual afterpulsing behavior allows for lower temperature operation without sacrificing maximum count rate, and may also offer new clues to the physical origin of afterpulsing in general.