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Mid-IR emission characteristics of low-phonon erbium-doped ternary chloride-based single crystals

机译:低位发射铒掺杂三元氯化三元氯化物的单晶的中红外排放特性

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The mid-infrared fluorescence properties of erbium (Er) doped low-phonon ternary chloride-based crystals (KPb_2Cl_5, Cs_2HfCl_6, CsPbCl_3, CsCdCl_3) have been investigated. All crystals were grown by vertical Bridgman technique. Following optical excitations at 805 nm and 660 nm, all Er~(3+) doped chlorides exhibited infrared emissions at ~2750, ~3500, and ~4500 nm at room temperature. The mid-infrared emission at 4500 nm originating from the ~4I_(9/2)→~4I_(11/2) transition showed long emission lifetime values of ~7.8 ms and ~11.6 ms for Er~(3+) doped Cs_2HfCl_6 and CsCdCl_3 crystals, respectively. In comparison, Er~(3+) doped KPb_2Cl_5 and CsPbCl_3 demonstrated shorter lifetimes of ~3 ms and ~1.8 ms, respectively. The temperature dependence of the ~4I_(9/2) decay times was performed for Er~(3+) doped CsPbCh and CsCdCl_3 crystals. We observed that the fluorescence lifetimes were nearly independent of the temperature, indicating a negligibly small non-radiative decay rate through multiphonon relaxation, as predicted by the energy gap law for low phonon energy hosts. The room temperature stimulated emission cross-sections for the ~4I_(9/2)→~4I_(11/2) transition were determined to be in a range of ~0.14-0.54 × 10~(-20) cm~2 for the studied Er doped chloride crystals.
机译:已经研究了铒的中红外荧光性质掺杂的低位氯化铬酰氯基晶体(KPB_2CL_5,CS_2HFCL_6,CSPBCL_3,CSCDCL_3)。所有晶体都是通过垂直的Bridgman技术种植的。在805nm和660nm处进行光学激发,所有ER〜(3+)掺杂的氯化物在室温下显示出红外发射,〜3500,〜4500nm。 4500nm的中红外发射源自〜4i_(9/2)→〜4i_(11/2)转变显示出长度的发射寿命值〜7.8ms和〜11.6ms,〜(3+)掺杂CS_2HFCL_6和CSCDCL_3晶体分别。相比之下,ER〜(3+)掺杂的KPB_2CL_5和CSPBCL_3分别显示了〜3 ms和〜1.8ms的较短寿命。对ER〜(3+)掺杂CSPBCH和CSCDCL_3晶体进行〜4i_(9/2)衰减时间的温度依赖性。我们观察到,荧光寿命几乎与温度差异,指示通过多光弛豫的忽略小的非辐射衰减速率,如低位能量宿主的能差法所预测的。室温刺激的〜4i_(9/2)→〜4i_(11/2)转变的横截面被确定为〜0.14-0.54×10〜(-20)cm〜2的范围内研究了ER掺杂的氯化物晶体。

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