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High Sensitivity Terahertz Detector Using Two-Dimensional Electron Gas Absorber and Tunnel Junction Contacts as a Thermometer

机译:高灵敏度太赫兹检测器使用二维电子气体吸收器和隧道结接触作为温度计

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We describe a new type of terahertz (THz) detector for astronomical observation using a two-dimensional electron gas (2DEG) as the absorbing medium. The detection principle is based on the hot electron effect in 2DEGs. Electrons are heated by THz radiation and the electron temperature is read out by two symmetrical superconductor - 2DEG tunnelling junctions. Hot electrons are removed via tunnelling through a barrier into the superconducting contacts. The energy gap in the superconducting contacts prevents the escape of the colder, non-photoexcited electrons from the 2DEG. The high mobility 2DEG itself is created within AlGaAs/GaAs heterostructure with a single quantum well. In this paper we present low temperature DC measurements of 2DEG detectors, and measurements of the electron-phonon thermal conductivity of a 2DEG at 4.2 K and 300 mK as a function of electron temperature and magnetic field (in the 4.2 K case). From these measurements we estimate the noise equivalent power (NEP) of an element in a filled array of S-2DEG-S detectors at 4.2 K to be on the order of " 10~uW/y/Wz with a response time of " Ins; at 300 mK, an NEP on the order ofcs 10~19W/y/ITz and a response time of ~ 0.1/J.S. Using measured parameters for the normal resistance of the S-2DEG-S contacts, we calculate the effect of using a voltage bias to cool the electrons in the absorber to significantly below a 300 mK base temperature. In this configuration, S-2DEG-S detectors can achieve sufficient sensitivity to detect individual THz photons.
机译:我们描述了一种新型的Terahertz(THz)检测器,用于使用二维电子气(2deg)作为吸收介质的天文观察。检测原理基于2degs中的热电子效果。电子通过THz辐射加热,并且通过两个对称超导体 - 2deg隧道结读出电子温度。通过隧道通过屏障进入超导触点,通过隧道移除热电子。超导触点中的能隙防止了来自2deg的较冷,非运动的电子的逸出。高迁移率2deg本身是在用单量子阱的藻类/ gaas异质结构中产生的。在本文中,我们呈现了2DEG检测器的低温直流测量值,以及在4.2 k和300 mk的2deg的电子 - 声子导热率的测量作为电子温度和磁场的函数(在4.2k例中)。从这些测量开始,我们估计4.2 k的填充S-2DEG-S探测器的元件的噪声等效功率(NEP),以约为“10〜UW / Y / WZ”的响应时间的顺序;在300 mk,在10〜19w / y / itz的顺序上的NEP和响应时间为约0.1 / J.s。使用测量参数对于S-2DEG-S触点的正常电阻,我们计算使用电压偏压将吸收器中的电子冷却至显着低于300 mk的基础温度的效果。在这种配置中,S-2DEG-S检测器可以实现足够的灵敏度以检测单个THz光子。

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