Study of Transport Properties in 1D Nanostructured Semiconductor Devices using Monte Carlo Simulation

摘要

Electron transport through devices (ternary Al_xGa_(1-x)As, Ga_xIn_(1-x)As and Al_xIn_(1-x) As), have been observed using Monte Carlo Simulation. The properties that have been observed and compared are number of electrons in the г. valley, L valley, and the X valley, drift velocit in the presence of different scattering mechanisms.