Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect

摘要

Standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using PECVD and RIE. Transmission of the waveguide was measured, and strong absorption peaks at 1056.8nm, 1406nm and 1263.2nm were observed.