The authors recently showed analytically that very small and dense SDT memory cells arrays (60 nanometer diameter, 6 minimum feature squared) can be achieved with SDT memory cells in which the information is stored in the direction of the IrMn low blocking temperature pinning [1,2,3]. The reference layer consisted of a synthetic antiferromagnet pinned with a high blocking temperature antiferromagnet. To demonstrate the durability and stability of the written IrMn pinning, a variety of test were conducted. For simplicity in fabrication, the test were conducted with just spin valve cells rather SDT cells.
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