Recently, spin valve devices are extending their applications to various magnetic sensor applications[1] as well as the giant magnetoresistance (GMR) devices of current perpendicular to plane (CPP) mode. To fabricate the spin valve devices on Si substrates, a diffusion barrier is necessary between the Si wafer and the underlayer, which is often a SiO{sub}2 layer. Since the MoN layer is a useful diffusion barrier, it could be used as an underlayer as well as a diffusion barrier if the MoN underlayer exhibits good MR ratio and high enough coupling field.
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