A current-driven domain wall (DW) motion predicted by Berger[1] is very attractive for spin electronics. It was demonstrated on nano wires, and the threshold current densities of 10{sup}11-10{sup}12A/m{sup}2 were obtained[2-5]. These results show that the magnetization can be controlled without an external field. Moreover, the threshold current likely will be decreased, as the device size is reduced. This is one of the most attractive points of the DW motion devices in applications, one that contrasts with a conventional magnetic device whose magnetization are controlled by the external fields. In this paper, we describe a new type of memory cell that uses DW motion for memory applications. The magnetic configurations were revealed using a simulation, and were observed by a magnetic force microscope (MFM).
展开▼
