Magnetoresistive Random Access Memory (MRAM) is a promising candidate to be a universal memory from the viewpoints of retention, high speed, and endurance [1]. It is well known that the retention is a key property for a non-volatile memory. The information on bits has to be kept for at least 10 years as in the case of a hard disk drive. However, the half-select issue (situation in which only Bit Line (BL) or Word Line (WL) current is applied) exists in the case of MRAM, and therefore, the reduction of the thermal energy by the applied field has to be considered carefully. According to single domain theory, the reduction of the thermal energy by the applied field is given by △E=KuV(1-H/Hk)^2.
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