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Giant Inverse Tunneling Magnetoresistance in Single CrO_2/Vacuum/Ni_80Fe_20 Using Conductive AFM

机译:使用导电AFM的单个CRO_2 / VACUUM / NI_80FE_20中的巨型逆隧道磁阻

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The chromium dioxide (CrO_2) is a half metallic ferromagnet which has both the metallic and semiconductive spin bands[1,2,3]. This material has been intensively investigated, because these half metallic spin bands induce the applications such as an enormously sensitive magnetic sensor and a MRAM etc. It was recently reported that the tunneling magnetoresistance (TMR) measurements in CrO_2/I/Co junctions showed the inverse TMR effects with the values of the TMR ratio of -24% and -1% at 5K and the room temperature, respectively by J. S. Parker et. al.[4]. The recent band calculations[5] support this inverse TMR effects, although the negative sign of the TMR is probably due to the insulator and/or Co. However, these values of the ratio are too small compared with the values expected theoretically in the junction using the half metal. The roughness of the interface between both layers probably reduces the values of the TMR ratio.
机译:二氧化铬(CRO_2)是半金属铁磁性,具有金属和半导体旋转带(1,2,3)。这种材料已经集中研究,因为这些半金属旋转带诱导诸如诸如极性敏感的磁传感器和MRAM等的应用。最近报道了CRO_2 / I / CO结中的隧道磁阻(TMR)测量显示逆TMR效应TMR比率为-24%和-1%在5K和室温下,通过JS Parker等。 al。[4]。最近的频带计算[5]支持这种反对TMR效果,尽管TMR的负迹象可能是由于绝缘体和/或COB的原因,但是,与在接线处预期的值相比,该比率的这些值太小了使用半金属。两层之间接口的粗糙度可能会降低TMR比率的值。

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