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High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

机译:基于巨磁阻效应的高灵敏度生物分子识别装置

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The structure and microfabrication, the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance (GMR) effect are introduced, also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction (MJT) material. The biomolecular recognition device contains an array of MJT sensors, single MJT sensor size is 10 μm×20 μm, tunneling magnetoresistance ratio (TMR) at room temperature is 52.2%, the typical values of junction resistance-area product Rs is 2.6 kΩμm{sup}2, detecting sensitivity of this system is about 8×10{sup}(-4) A·m{sup}(-1). Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.
机译:介绍了基于巨磁阻(GMR)效应的基于巨磁电阻(GMR)效应的结构和微小制造,检测理论和基于巨大磁阻效应的方式。还提出了信号检测和处理仪器。这里,GMR生物传感器用磁隧道结(MJT)材料制造。生物分子识别装置包含MJT传感器的阵列,单个MJT传感器尺寸为10μm×20μm,室温下的隧道磁阻比(TMR)为52.2%,结的接线电阻区域产品RS的典型值为2.6kΩμm{sup 2,检测该系统的灵敏度约为8×10 {sup}( - 4)a·m {sup}( - 1)。该装置的生物涂布层由PDMS制造,其厚度小于100nm。

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