首页> 外文会议>Symposium on Micro- and Nanosystems- Materials and Devices >Fabrication of a Bimodal Ferromagnetic Nanosystem in an Etched Silicon Structure and its Magnetic and Magneto-Optic Characterization
【24h】

Fabrication of a Bimodal Ferromagnetic Nanosystem in an Etched Silicon Structure and its Magnetic and Magneto-Optic Characterization

机译:在蚀刻硅结构中的双峰铁磁性纳米系统的制造及其磁性光学表征

获取原文

摘要

Ni-nanowires are fabricated in a two-step electrochemical process. In the fifstetep a porous silicon template with oriented pores perpendicular to the surface is produced. The electrochemical parameters for this etching procedure, like HF-concentration, current-density, etching-time and bath-temperature have to be chosen in a very small regime to obtain the favored structure in a good quality. This mesoporous silicon skeleton with highly oriented pores and homogeneous spatial distribution is filled in a further electrochemical step by a ferromagnetic metal, like Ni. This selforganized Ni-nanowire array is characterized by Auger-spectroscopy to evidence the loading of the pores over the full length. SEM and BSE are used to reveal the orientation of the pores and the homogeneous Ni-filling. By Fourier Transform image processing a predominant quadratic self-organized grouping of the (100) grown pores is identified. An additional investigation method is EDXS to show the element distribution in the sample. Furthermore magnetization measurements are used to generate a model for the Ni-loading in the channels. Not only wires but also granules in the size up to 200 nm are present. IR-spectroscopy investigations are used to compare the bare silicon wafer, the porous silicon (PS) sample and the PS with incorporated Ni at zero and finite magnetic fields.
机译:Ni-纳米线在两步电化学过程中制造。在FIFSTET中,产生具有垂直于表面的取向孔的多孔硅模板。用于该蚀刻程序的电化学参数,如HF浓度,电流密度,蚀刻时间和浴温,必须在非常小的制度中选择以获得优质的优质结构。这种具有高度取向孔和均匀空间分布的介孔硅骨架通过铁磁金属填充在另一电化学步骤中,如Ni。这种自动的Ni-纳米线阵列的特征在于螺旋钻,以证明在全长上载入孔的装载。 SEM和BSE用于露出孔的取向和均匀的Ni填充。通过傅里叶变换图像处理(100)生长的孔的主要自组织分组是鉴定的。额外的研究方法是EDXS,以显示样品中的元素分布。此外,磁化测量用于生成通道中的NI加载的模型。不仅有电线,还有颗粒的尺寸为高达200nm。 IR光谱研究用于将裸硅晶片,多孔硅(PS)样品和PS与零和有限磁场以合并的Ni进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号