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In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

机译:CVD氧化硅和氮化硅膜的体内生物稳定性

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Low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide .^A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.
机译:低压化学气相沉积(LPCVD)和等离子体增强的化学气相沉积(PECVD)氧化硅和氮化硅膜在大鼠模型中被植入大鼠模型中,以研究薄膜的体内行为。涂有利息薄膜的硅芯片植入长达一年,通过分光光度法和切片评估膜厚度。估计溶解速率为LPCVD氮化硅,2.0nm /天用于PECVD氮化硅的2.0nm /天,以及PECVD氧化硅的3.5nm /天。^在氧化硅/硅上观察到类似的PECVD氧化硅溶解速率通过聚焦离子束蚀刻切片的氮化物/氧化硅堆。这些结果提供了用于设计具有暴露陶瓷膜的可植入微制订装置的可缓解性参考。

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