The SI/PI Modeling and Measurement of Memory System by Probing on Top of DRAM Package

摘要

Continuous increase in the performance and speed of computer systems has led to more frequent field failures of memory systems. As a result, accurate measurement and modeling are becoming of utmost importance for memory vendors in order to guarantee the electrical reliability of their products. However, conventional on-chip measurement methodologies such as probing on the decoupling capacitor or a use of a test interposer between chip pads and measurement points. In this paper, we propose a novel method of measuring Signal Integrity and Power Integrity (SI/PI) performances of DRAM operation by directly probing on top of DRAM package. With this proposed test package, we prove the effectiveness of monitoring on-chip operation through simulation and measurement and hence, effectively enhance the level of SI/PI modeling and predictability of memory systems.