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Polycapillary optic-enhanced x-ray diffraction and fluorescence for rapid materials analysis

机译:多毛细管光学增强X射线衍射和荧光用于快速材料分析

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An energy dispersive x-ray diffraction and fluorescence (EDXRD/XRF) system with no moving parts was developed to monitor in situ the initial stages of thin film growth. The EDXRD/XRF system utilized a low power 25 W microfocus x-ray source and collimating polycapillary optics manufactured by X-Ray Optical Systems (XOS). Metastable semiconductor thin film samples containing phase-separated inclusions of Sn were analyzed for simulation of early deposition stages. The time required to obtain sufficient diffraction data from these thin films was on the order of 60 seconds. Diffraction and fluorescence data were simultaneously obtained making it possible to simultaneously determine the crystal structure and composition of thin films while they are growing. This has the potential for revolutionizing how new materials are developed and commercialized, significantly cutting development and process control costs. An additional XRF system was developed that utilized a low power 20 W microfocus x-ray source and a focusing polycapillary optic. The Sn minimum detectable limit of this system (samples of interest were Ge1-xSnx) was on the order of nanograms using the Sn-Lα signal, which corresponds to picograms from a Sn-Kα signal. Such low levels are usually only possible with a rotating anode source 103 times more powerful than the low power sealed tube source used in this experiment. An 100nm thin Ge1-xSnx sample made by ion implantation was analyzed with this XRF system. In 300 s, a detectable signal was obtained, indicating the viability of this system for in situ, thin film, composition monitoring and characterization of the first several monolayers of thin film growth.
机译:开发了具有没有运动部件的能量分散X射线衍射和荧光(EDXRD / XRF)系统以原位监测薄膜生长的初始阶段。 EDXRD / XRF系统利用低功率25W微焦焦X射线源和由X射线光学系统(XOS)制造的准直的多百曲线光学器件。分析了含有Sn的相分离的Sn的相分离的半导体薄膜样品用于模拟早期沉积阶段。从这些薄膜获得足够的衍射数据所需的时间约为60秒。同时获得衍射和荧光数据,使得可以同时确定薄膜的晶体结构和组成在生长时。这有可能彻底改变新材料的开发和商业化,显着降低开发和过程控制成本。开发了一种额外的XRF系统,其利用低功率20W微焦X射线源和聚焦多谱光学光学。该系统的SN最小可检测限制(感兴趣的样本是GE1-XSNX)在使用SN-Lα信号的纳米线的顺序上,这对应于来自SN-Kα信号的PicoICS。这种低级通常仅具有比该实验中使用的低功率密封管源更强大的旋转阳极源103倍。通过该XRF系统分析通过离子注入制备的100nm薄的GE1-XSNX样品。在300秒中,获得可检测信号,表明该系统用于原位,薄膜,组成监测和第一种薄膜生长的第一几种单层的能力。

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