Design and characterization of a four-quadrant detector and its application to shape recovering system.

摘要

This work describes the characterization of a quadrant-type silicon photodiode that detect visible light and is designed using CMOS integrated circuit technology, peaking in 550 nm wavelength. The quadrant detector (QD) derives photocurrents by projecting a spot of light on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm~(2) per active area by each quadrant and the size of the device is 9mm~(2). Its transition region between the adjacent cells had a narrow width of 30 (mu)m. The technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity is described. In addition, the performance on applying the QD to shape a recovering system is investigated.