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Charge transport in nanoscaled silicon-on-insulator devices

机译:纳米级绝缘体装置的电荷运输

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The electron transport properties of different Silicon on Insulator (SOI) devices have been studied. We have considered two type of semiconductor structures: ⅰ) quantum-well SOI structures and ⅱ) quantum-wire devices. In the first group, Qwell-based devices, the electron mobility in double-gate SOI devices as the silicon thickness, decreases was compared with the mobility in Single-Gate SOI structures. Thus, we determined the existence of a range of silicon layer thicknesses in which electron mobility in DGSOI inversion layers is significantly improved as compared to bulk-silicon or SGSOI inversion layers, due to the volume inversion effect. With regard to QWire-based devices, we have analyzed the phonon-limited mobility in silicon quantum wires by means of a one-particle Monte Carlo simulator. It has been observed that the increasing of the phonon scattering produces a noticeable reduction of the electron mobility observed when the device dimensions are reduced. Therefore, we have observed that the transition from a 2D to a 1D electron gas produces a degradation of the electron transport properties.
机译:研究了绝缘体上不同硅的电子传输性能(SOI)器件。我们已经考虑了两种类型的半导体结构:Ⅰ)量子阱SOI结构和Ⅱ)量子线装置。在第一组中,基于QWEL的装置,双栅极SOI器件中的电子迁移率作为硅厚度,与单栅SOI结构中的迁移率相比减小。因此,与体积反转效果相比,我们确定了与体积硅或SgSoI反转层相比显着提高了一系列硅层厚度的硅层厚度。关于基于QWIRE的设备,我们通过单粒子蒙特卡罗模拟器分析了硅量子线中的声子 - 有限的移动性。已经观察到,当器件尺寸减小时,声子散射的增加产生显着减少电子迁移率。因此,我们已经观察到从2D到1D电子气体的过渡产生电子传输性能的劣化。

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