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Chair's introduction

机译:主席的介绍

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摘要

The three topics chosen for discussion by the organizers of this meeting are (1) the structural basis of function of hERG channels, (2) the physiological roles of hERG channels and (3) mechanisms of drug-induced long QT syndrome (LQTS). Due to time constraints, we will not have formal presentations on many other important topics related to hERG biology, but we plan to address some of these issues during the discussion periods. Although an X-ray crystallographic structure is not available for hERG, we do have a model that is based on crystal structures of the bacterial channels KcsA, KvAP and MthK (Doyle et al 1998, Jiang et al 2002, 2003). We know from biophysical studies of Shaker and the X-ray structures of these bacterial channels that the S5, pore helix and S6 transmembrane domains compose the pore domain of hERG, as well as the likely structural basis of the selectivity filter. The S1-S4 transmembrane domains comprise the voltage-sensing component of the channel. The fourth transmembrane domain is by far the most important part of the voltage sensor, with several positively charged amino acids spaced three residues apart. Some of the basic residues in S4 also interact with the few acidic residues located in the S2 and S3 transmembrane domains. What is unusual about hERG is that it activates very slowly and inactivates rapidly compared to most other voltage-gated K~+ channels. The regions thought to be important for slow activation and deactivation include the N-terminal PAS domain, the S4-S5 linker and the end of the S6 domain. The structural basis for rapid inactivation is unknown, but it is presumed to be somewhat similar to C-type inactivation, involving residue interactions between S5 and the pore loop.
机译:本次会议组织者选择讨论的三个主题是(1)HERG频道功能的结构基础,(2)HERG通道的生理作用和(3)药物诱导的长QT综合征(LQT)的机制。由于时间限制,我们将没有关于与HERG生物学相关的许多其他重要主题的正式演示,但我们计划在讨论期间解决一些这些问题。虽然HERG不可用X射线晶体结构,但我们确实具有基于细菌通道KCSA,KVAP和MTHK的晶体结构的模型(Doyle等1998,Jiang等人2002,2003)。我们从振荡器和这些细菌通道的X射线结构的生物物理研究中知道S5,孔螺旋和S6跨膜结构域组成HERG的孔结构域,以及选择性过滤器的可能结构基础。 S1-S4跨膜域包括通道的电压传感组件。第四跨膜结构域是迄今为止电压传感器的最重要部分,几个带正电荷的氨基酸间隔三个残留物。 S4中的一些基本残基也与位于S2和S3跨膜结构域中的少量酸性残基相互作用。关于HERG的异常是什么,与大多数其他电压门控K +通道相比,它非常缓慢地激活并迅速激活。该区域认为对于慢激活和停用是重要的,包括N末端PAS域,S4-S5接头和S6结构域的末端。快速灭活的结构基础是未知的,但据推测,与C型失活有些类似,涉及S5和孔隙环之间的残留物相互作用。

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