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QUANTUM WELL THERMOELECTRIC DEVICES

机译:量子阱热电装置

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Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type B{sub}4C/B{sub}9C and N-type Si/SiGe films. Si/SiC is being developed to replace Si/SiGe for higher temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved 700 hours at T{sub}H of 300°C and T{sub}C of 50°C with no degradation. Emphasis is now shifting towards couple and module design and fabrication. Preliminary design calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs.
机译:用P型B×4C / B {Sim} 9C和N型Si / SiGe膜继续高效量子阱(QW)热电的制造开发。正在开发SI / SIC以替换SI / SIGE进行更高的温度操作。等温和梯度寿命测试都在进行中。一对夫妇在300°C和T {Sub} C的T {Sub} H中实现了700小时,没有降级。重点现在正在转向夫妇和模块的设计和制造。关于电源预测和冷却应用,将提出关于实际量子阱模块的开发的初步设计计算。这些模块可用于未来的能量转换系统以及空调系统设计。

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