Modeling of charge and collector field in Si-based bipolar transistors

机译：基于SI基双极晶体管的充电和集电极场建模

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An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.

机译：提出了双极晶体管集电器中的电压和电流相关电场的分析制剂。然后采用新的场表达式来计算基本集电极耗尽电容和现场相关的传输时间分量。与设备仿真结果的比较显示了良好的一致性。

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《NSTI Nanotechnology Conference and Trade Show》|2005年||共6页
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H. Tran; M. Schroter;
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2. The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors [J] . Christian Schippel, Jun Fu, Frank Schwierz Physica Status Solidi. C, Conferences and critical reviews . 2006,第3期

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3. Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model [J] . de Graaff H.C., Kloosterman W.J. IEEE Transactions on Electron Devices . 1995,第2期

机译：在MEXTRAM模型中对双极型晶体管的集电极外延层进行建模
4. Modeling of charge and collector field in Si-based bipolar transistors [C] . H. Tran, M. Schroter NSTI Nanotechnology Conference and Trade Show . 2005

机译：基于SI基双极晶体管的充电和集电极场建模
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

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Modeling of charge and collector field in Si-based bipolar transistors

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