Microfabricated Heteroepitaxial Oxide Structures on Silicon for Bolometric Arrays

摘要

The microfabrication of the free standing perovskite La_(0.67)(Sr,Ca)_(0.33)MnO_3 (LSCMO) thin films on silicon substrates with epitaxial grown oxide buffer layers was investigated for microbolometer application. The Ar ion etching (IBE) rate of LSCMO films was found to be 16 nm/min. Using pre-annealed photoresist patterning, the free standing LSCMO pixels on epitaxial buffer oxide membrane were realized by the IBE and SF_6 inductive coupled plasma (ICP) etching process. These results can be utilized as thermally isolated membrane for heteroepitaxial oxide structures.