A Sub-100μW 1.9-GHz CMOS Oscillator Using FBAR Resonator

摘要

This paper presents an ultra-low power CMOS oscillator using Film Bulk Acoustic Resonator (FBAR). The 1.9-GHz oscillator consumes 89μW from a low supply voltage of 430mV and achieves an excellent phase-noise performance of -98 dBc/Hz, -120 dBc/Hz and -138 dBc/Hz at 10kHz, 100kHz and 1MHz offset respectively. The oscillator is implemented in a standard 130nm CMOS process and packaged using chip-on-board techniques. Compared with other state-of-the-art oscillators, this oscillator has the best figure-of-merit [1]. To the authors' knowledge, this is the first sub-100μW GHz-range oscillator reported.