A sub-100 /spl mu/W 1.9-GHz CMOS oscillator using FBAR resonator

摘要

The paper presents an ultra-low power CMOS oscillator using film bulk acoustic resonator (FBAR). The 1.9-GHz oscillator consumes 89 /spl mu/W from a low supply voltage of 430 mV and achieves an excellent phase-noise performance of -98 dBc/Hz, -120 dBc/Hz and -138 dBc/Hz at 10 kHz, 100 kHz and 1 MHz offset, respectively. The oscillator is implemented in a standard 130 nm CMOS process and packaged using chip-on-board techniques. Compared with other state-of-the-art oscillators, this oscillator has the best figure-of-merit (Ham, D. et al., IEEE J. Solid State Circuits, vol.36, no.6, p.896-909, 2001). To the authors' knowledge, this is the first sub-100 /spl mu/W GHz-range oscillator reported.