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Influence of Pt underlayer and substrate temperature on oriented growth of L10 FePt/MgO (110) thin films

机译:PT底层和衬底温度对L10备用/ MgO(110)薄膜为导向生长的影响

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C-axis oriented L10 FePt thin films have gained a lot of interest for its application in perpendicular magnetic recording media. High switching field (SF) and wide SF distribution caused by even slight changes in magnetic easy axis of grains are major concerns. According to Stoner-Wohlfarth model which describes magnetic reversal behavior of uniaxial single domain ferromagnetic particle, L10 FePt thin film with tilted easy axes of the grains can be applied to reduce SF and make it insensitive to orientation variation. The ideal tilting angle is 45?, which is corresponding to (101) oriented growth of L10 FePt and can maximum the reduction of SF to 50%. However, mixed orientation of (101) and (110) can be found when FePt is deposited on MgO (110) substrate. Energetically, (101) oriented film will have lower surface energy, thus the influence of introducing Pt buffer layer and adjusting substrate temperature during deposition is studied to promote (101) oriented growth.
机译:C轴取向L10备用薄膜对其在垂直磁记录介质中的应用获得了很多兴趣。高开关场(SF)和诸如磁性容易轴的微小变化引起的宽SF分布是主要的担忧。根据描述单轴单畴铁磁颗粒的磁反转行为的Stoner-Wohlfarth模型,可以施加L10具有倾斜易轴的玻璃件的薄膜,以减少Sf并使其对取向变化不敏感。理想的倾斜角度为45?,相当于(101)L10备用效率的增长,并且可以最大地降低SF至50%。然而,当在MgO(110)衬底上沉积扫描时,可以找到(101)和(110)的混合取向。精力学地,(101)取向薄膜的表面能量较低,因此研究了引入Pt缓冲层和调节沉积期间的衬底温度的影响,以促进(101)取向的生长。

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